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| CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. Top View Bottom View FEATURES: * Dual Chip Device * High Current (IF=1.0A) * Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) * High Thermal Efficiency * Small TLM 3x2mm case TLM832D CASE MARKING CODE: CFA APPLICATIONS: * DC/DC Converters * Reverse Battery Protection MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL IR IR IR BVR VF VF VF VF CJ TEST CONDITIONS VR= 5V VR= 8V VR= 15V IR= 100A IF= 10mA IF= 100mA IF= 500mA IF= 1.0A VR= 4.0V, f=1.0MHz 50 40 0.29 0.36 0.45 0.55 SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg JA (TA=25C unless otherwise noted) MIN TYP MAX 10 20 50 UNITS A A A V V V V V pF 40 1.0 3.5 10 1.65 -65 to +150 75.8 * Battery Powered Portable Equipment UNITS V A A A W* C C/W* *FR-4 Epoxy PCB with copper mounting pad area of 54mm2 R2 (27-April 2006) Central TM CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Semiconductor Corp. TLM832D CASE - MECHANICAL OUTLINE Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details LEAD CODE: 1) 2) 3) 4) 5) 6) 7) 8) ANODE D1 ANODE D1 ANODE D2 ANODE D2 CATHODE D2 CATHODE D2 CATHODE D1 CATHODE D1 MARKING CODE: CFA R2 (27-April 2006) |
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